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1N746 THRU 1N759
ZENER DIODES
FEATURES
DO-35
Silicon Planar Power Zener Diodes Standard Zener voltage tolerance is 5% for "A" suffix. Other tolerances are available upon request.
min. 1.083 (27.5)
max. .150 (3.8)
max. .079 (2.0)
Cathode Mark
min. 1.083 (27.5)
max. .020 (0.52)
MECHANICAL DATA
Case: DO-35 Glass Case Weight: approx. 0.13 g
Dimensions are in inches and (millimeters)
MAXIMUM RATINGS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Zener Current (see Table "Characteristics") Power Dissipation at TL = 75C Maximum Junction Temperature Storage Temperature Range
NOTES:
Ptot Tj TS
500(1) 175 - 65 to +175
mW C C
(1) TL is measured 3/8" from body.
SYMBOL
MIN.
TYP.
MAX.
UNIT
Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 200 mA
NOTES:
RthJA
-
-
300(1)
C/W
VF
-
-
1.5
Volts
(1) Valid provided that leads at a distance of 3/8" from case are kept at ambient temperature.
1/6/98
1N746 THRU 1N759
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
Type Number
Nominal Zener Voltage VZ @ IZT(3) (Volts)
Test Current IZT (mA)
Maximum Zener Impedance ZZT @ IZT(1) ()
Maximum Regulator Current IZM(2) (mA)
Maximum Reverse Leakage Current TA = 25C IR @ VR = 1V (A) TA = 150C IR @ VR = 1V (A)
1N746A 1N747A 1N748A 1N749A 1N750A 1N751A 1N752A 1N753A 1N754A 1N755A 1N756A 1N757A 1N758A 1N759A
3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 12
20 20 20 20 20 20 20 20 20 20 20 20 20 20
28 24 23 22 19 17 11 7 5 6 8 10 17 30
110 100 95 85 75 70 65 60 55 50 45 40 35 30
10 10 10 2 2 1 1 0.1 0.1 0.1 0.1 0.1 0.1 0.1
30 30 30 30 30 20 20 20 20 20 20 20 20 20
NOTES: (1) The Zener Impedance is derived from the 1 KHZ AC voltage which results when an AC current having an RMS value equal to 10% of the Zener current (IZT) is superimposed on IZT. Zener Impedance is measured at two points to insure a sharp knee on the breakdown curve and to eliminate unstable units. (2) Valid provided that leads at a distance of 3/8" from case are kept at ambient temperature. (3) Measured with device junction in thermal equilibrium.


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